LETI's Annual Review 2009 & Workshops
22 - 24 june 2009, Minatec / Grenoble
création graphique
  • Workshop 3 : Innovative memory technologies
    Chairs : Barbara DE SALVO, Ludovic POUPINET, CEA-LETI

  • Introduction


     
    Ludovic POUPINET, CEA-LETI
    Barbara DE SALVO, CEA-LETI
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    Session 1 : Charge-storage memorie

      Invited paper : "Embedded FLASH applications"
    Jean DEVIN, ST Microelectronics
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      Charge-trap memories with high-k dielectrics
    Gabriel MOLAS, CEA-LETI
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    Silicon nanocrystal and metallic nanoparticle memories
    Guillaume GAY, CEA-LETI
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    Overview of embedded 65nm Flash technology
    Sylvie BRUYERE, ST Microelectronics
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      eFlash TCAD and simulation
    Raphaël CLERC, IMEP
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    Session 2 : Resistive memories

      Invited paper : "Phase Change Memory : State of Art and Perspective"
    Roberto BEZ, Numonyx
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      PCRAM based on new materials
    Luca PERNIOLA
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      Electrical performances of NiO resistive switching materials
    Christophe MULLER, IM2NP
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      Invited paper : " Storage Class Memory - Opportunities and Challenges"
    Chung H. LAM, IBM
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      OxRAM technologies
    Christophe VALLEE, LTM
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    Session 3 : 3D and novel memory ideas


     
    Invited paper : "Limitation and Opportunity of High DEnsity Flash Memories"
    Seung Jae BAIK, Samsung
    Presentation not available
     
      SOI Technology & 3D memory architectures
    Thomas ERNST, CEA-LETI
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    Thin-film memories
    Pascal MAZOYER, ST Microelectronics
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    Molecular memories
    Julien BUCKLEY, CEA-LETI
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    Nanocomponents based neuromimetic memories
    Weisheng ZHAO, IEF
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